nec's c to x band n-channel gaas mes fet NE722S01 features ? high power gain: gs = 6 db typ at f = 12 ghz ? output power (at 1 db compression) : 15 db typ at f = 12 ghz ? low noise/high gain: nf = 0.9 db typ, ga = 12 db typ at f = 4 ghz ? gate length: l g = 0.8 m (recessed gate) ? gate width: w g = 400 m part number NE722S01 package outline s01 symbols parameters and conditions units min typ max i gso gate to source leak current, v gs = -5 v ua ? 1.0 10 i dss saturated drain current, v ds = 3 v, v gs = 0 v ma 60 90 120 v gs gate to source cutoff voltage, v ds = 3 v, i d = 100 av -0.5 ? -4.0 g m transconductance, v ds = 3 v, i ds = 30 ma ms 20 45 ? g s power gain, v ds = 3 v, i ds = 30 ma, f = 12 ghz db ? 6 ? p1db output power at 1 db gain compression point at dbm 15.0 v ds = 3 v, i ds = 30 ma, f = 12 ghz nf noise figure, v ds = 3 v, i ds = 10 ma, f = 4 ghz db ? 0.9 ? ga associated gain, v ds = 3 v, i ds = 10 ma, f = 4 ghz db ? 12 _ electrical characteristics (t a = 25 c) package outline so1 1. source 2. drain 3. source 4. gate outline dimension (units in mm) 2.0 0.2 0.65 typ 2.0 0.2 4 2 3 1 0.5 typ 2.00.2 1.9 0.2 0.125 0.05 1.6 0.4 max 4.0 0.2 1.5 max p applications ?c to x band low noise amplifiers ?c to x band oscillators description nec's NE722S01 is a low cost gaas mesfet suitable for both amplifier and oscillator applications through x-band. the device features a 0.8 micron recessed gate, triple epitaxial technology and is fabricated using ion implantation for improved rf and dc performance and uniformity. this device's low phase noise and high ft makes it a excellent choice for oscillator applications on a digital lnb (low noise block). the NE722S01 is housed in a low cost plastic package which is available in tape and reel. nec's stringent quality assurance and test procedures ensure the highest reliability performance. california eastern laboratories
part number supply form marking NE722S01-t1 tape & reel 1000 pcs/reel NE722S01-t1b 1 tape & reel 4000 pcs/reel note: 1. available if quantity is over 100k per month ordering information recommended operating conditions (t a = 25 c) p art number NE722S01 symbols parameters units min typ max v ds drain to source voltage v 3 4 i ds drain current ma 30 40 symbols parameters units ratings v ds drain to source voltage v 5.0 v gs gate to source voltage v -5.0 v gd gate to drain voltage v -6.0 i ds drain current ma i dss p t total power dissipation mw 250 p in input power mw 40 t ch channel temperature c 125 t stg storage temperature c -65 to +125 absolute maximum ratings 1 (t a = 25 c) note: 1. operation in excess of any one of these parameters may result in permanent damage. NE722S01 drain current, i ds (ma) typical performance curves (t a = 25 c) drain current, i ds (ma) drain current vs. drain to source voltage drain to source voltage, v ds (v) drain current vs. gate to source voltage gate to source voltage, v gs (v) 60 40 80 20 0 -4.0 -2.0 v ds = 3.0 v 0 total power dissipation vs. ambient temperature total power dissipation, (p t ) mw maximum stable gain, msg (db) maximum available gain, mag (db) forward insertion gain, |s 21 s | 2 (db) 500 400 300 200 100 050 100 150 200 250 v ds = 3 v i ds = 10 ma 12 16 20 0 8 4 151014 20 50 msg. |s 21s | 2 0.5 mag. mag = |s 21 | |s 12 | k - 1 ). 2 ( k when k 1, mag is undefined and msg values are used. ? = s 11 s 22 - s 21 s 12 msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , ambient temperature, t a ( c) frequency, f (ghz) maximum available gain, forward insertion gain vs. frequency 60 80 40 20 100 04 35 2 1 -0.5 v -1.0 v -2.0 v v gs = 0.0 v mag = maximum available gain msg = maximum stable gain note: 1. gain calculation: mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , p
NE722S01 typical performance curves (t a = 25 c) input power, p in (dbm) output power, p out (dbm) output power vs. input power v ds = 3.0 v, i d = 30 ma f in = 12 ghz 20 15 10 5 0 -5 -10 -15 10 5 0 -5 -10 15
NE722S01 typical scattering parameters (t a = 25 c) frequency s 11 s 21 s 12 s 22 ghz mag ang mag ang mag ang mag ang 2.0 0.912 -44.0 3.100 136.2 0.077 59.0 0.659 -30.2 2.5 0.876 -56.1 3.037 124.9 0.091 51.2 0.629 -38.0 3.0 0.828 -68.0 2.935 113.9 0.105 42.9 0.597 -46.4 3.5 0.784 -79.3 2.819 103.7 0.115 36.2 0.570 -53.5 4.0 0.737 -89.5 2.696 94.2 0.124 30.0 0.546 -60.9 4.5 0.699 -99.3 2.589 85.3 0.130 24.7 0.529 -67.2 5.0 0.660 -109.0 2.499 76.6 0.136 19.1 0.514 -73.6 5.5 0.620 -119.0 2.420 67.9 0.140 14.1 0.495 -79.6 6.0 0.583 -130.6 2.355 59.4 0.146 9.1 0.475 -85.2 6.5 0.547 -143.8 2.283 50.1 0.148 3.8 0.447 -91.5 7.0 0.516 -158.5 2.196 41.0 0.151 -1.6 0.408 -97.0 7.5 0.496 -173.7 2.098 32.2 0.149 -6.6 0.366 -103.7 8.0 0.500 172.6 2.016 23.7 0.152 -10.1 0.331 -110.8 8.5 0.510 159.9 1.920 15.3 0.150 -13.6 0.298 -120.4 9.0 0.526 148.4 1.834 7.2 0.151 -17.3 0.274 -133.2 9.5 0.540 138.4 1.749 -0.6 0.151 -20.3 0.265 -147.9 10.0 0.553 129.9 1.676 -7.9 0.152 -23.2 0.275 -160.7 10.5 0.566 120.6 1.608 -15.8 0.156 -26.3 0.297 -172.7 1 1.0 0.576 111.3 1.542 -23.5 0.157 -29.8 0.312 178.5 1 1.5 0.592 101.8 1.470 -31.1 0.157 -32.9 0.328 171.0 12.0 0.608 92.8 1.401 -38.4 0.158 -35.7 0.340 163.5 12.5 0.640 85.2 1.325 -45.7 0.159 -38.0 0.339 155.6 13.0 0.665 79.1 1.256 -52.7 0.160 -41.3 0.341 145.5 13.5 0.693 73.3 1.183 -59.7 0.158 -44.5 0.356 133.8 14.0 0.718 69.3 1.111 -66.4 0.162 -47.0 0.386 122.3 14.5 0.744 64.8 1.045 -73.3 0.163 -49.5 0.421 111.6 15.0 0.759 59.6 0.966 -79.7 0.159 -53.4 0.474 104.4 15.5 0.756 55.5 0.893 -85.4 0.159 -55.8 0.516 98.7 16.0 0.750 51.0 0.839 -91.0 0.160 -57.6 0.563 95.8 16.5 0.738 45.4 0.777 -96.7 0.158 -61.4 0.601 92.8 17.0 0.728 40.9 0.714 -101.5 0.158 -63.1 0.624 89.4 17.5 0.721 36.4 0.676 -105.7 0.156 -65.9 0.628 86.9 18.0 0.721 32.5 0.624 -109.8 0.158 -68.4 0.625 82.2 NE722S01 v ds = 3.0 v, i ds = 10 ma mag = maximum available gain msg = maximum stable gain note: 1. gain calculation: mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | ,
NE722S01 typical scattering parameters (t a = 25 c) frequency s 11 s 21 s 12 s 22 ghz mag ang mag ang mag ang mag ang 2.0 0.896 -48.3 3.721 134.0 0.063 59.9 0.547 -29.6 2.5 0.851 -61.5 3.606 122.4 0.077 53.2 0.519 -37.4 3.0 0.799 -74.1 3.449 111.3 0.086 45.1 0.489 -45.4 3.5 0.753 -86.1 3.275 101.1 0.095 39.6 0.464 -52.6 4.0 0.705 -97.0 3.102 91.6 0.102 34.1 0.443 -59.5 4.5 0.666 -107.3 2.957 82.7 0.106 29.5 0.431 -65.5 5.0 0.625 -117.5 2.834 74.0 0.111 24.9 0.419 -71.5 5.5 0.586 -128.3 2.724 65.3 0.115 20.6 0.406 -76.9 6.0 0.553 -140.6 2.627 56.8 0.122 17.0 0.390 -82.2 6.5 0.521 -154.2 2.522 47.7 0.125 12.6 0.366 -88.2 7.0 0.497 -169.4 2.402 39.0 0.128 8.5 0.334 -93.4 7.5 0.489 175.8 2.281 30.5 0.128 5.0 0.296 -99.7 8.0 0.501 162.9 2.176 22.5 0.131 1.8 0.267 -106.8 8.5 0.519 151.0 2.062 14.5 0.135 -1.2 0.234 -117.8 9.0 0.540 140.4 1.963 6.8 0.139 -3.4 0.209 -132.7 9.5 0.562 131.2 1.865 -0.7 0.142 -6.8 0.206 -150.0 10.0 0.575 123.2 1.786 -7.8 0.146 -9.9 0.221 -164.3 10.5 0.589 114.3 1.709 -15.4 0.151 -12.8 0.246 -177.2 1 1.0 0.602 105.5 1.637 -22.9 0.156 -16.7 0.265 173.7 1 1.5 0.619 96.4 1.554 -30.2 0.161 -20.5 0.285 166.1 12.0 0.633 88.0 1.480 -37.4 0.163 -23.9 0.299 158.1 12.5 0.666 80.9 1.400 -44.5 0.168 -27.4 0.303 149.9 13.0 0.690 75.2 1.321 -51.1 0.171 -30.5 0.307 139.1 13.5 0.715 70.0 1.241 -57.9 0.173 -33.9 0.326 127.4 14.0 0.740 66.4 1.169 -64.2 0.173 -37.3 0.358 116.2 14.5 0.769 62.0 1.101 -70.8 0.174 -41.0 0.396 106.2 15.0 0.780 57.0 1.021 -77.1 0.178 -45.3 0.450 99.5 15.5 0.778 52.5 0.945 -82.6 0.175 -48.6 0.494 94.8 16.0 0.774 48.2 0.888 -88.0 0.176 -51.4 0.540 92.0 16.5 0.759 42.7 0.824 -93.4 0.176 -56.1 0.578 89.4 17.0 0.750 38.1 0.767 -98.3 0.174 -58.3 0.601 86.3 17.5 0.739 33.9 0.721 -102.3 0.175 -61.1 0.604 84.0 18.0 0.741 30.2 0.672 -106.6 0.176 -63.3 0.599 79.2 NE722S01 v ds = 3.0 v, i ds = 30 ma mag = maximum available gain msg = maximum stable gain note: 1. gain calculation: mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | ,
schematic cgd_pkg 0.001pf rsx 0.01 ohms lgx cds_pkg 0.1pf cgs_pkg 0.08pf rdx 1 ohms lsx 0.13nh source drain rgx 1 ohms gate 0.71nh ldx 0.5nh q1 life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury. the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale. NE722S01 nonlinear model parameter units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps units model range frequency: 0.1 to 18 ghz bias: v ds = 2 v to 4 v, i d = 10 ma to 40 ma date: 02/2002 parameters q1 parameters q1 vto -2.24 rg 8 vtosc 0 rd 0.5 alpha 8 rs 6 beta 0.055 rgmet 0 tqgamma 0.04 tnom 27 tqgammaac 0.05 xti 3 q 1.5 eg 1.43 tqdelta 0.25 vtotc 0 vbi 1 betatce 0 is 1e-14 ffe 1 n 1.3 fnc (2) 150e-6 ris 0 r 0.5 rid 0 p 1 ta u 3e-12 c 0.9 cds 0.19e-12 rdb 250 cbs 1e-9 cgs 0.92e-12 cgd 0.05e-12 delta1 0.3 delta2 0.3 fc 0.5 vbr infinity fet nonlinear model parameters (1) (1) ads tom model (2) to simulate phase noise using af/kf: af = 1.5 kf = 2e-10 a business partner of nec compound semiconductor devices, ltd. 07/01/2004
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